CLASSIFICATION

Multi-Chamber UHV Magnetron Sputter

Tags:

Optics

Metallic Materials

Superconducting Materials

Semiconductor

Metallic Materials

—Material fabrication
Niobium, Niobium Nitride, Tantalum, Aluminum, Alloy metal, ITO film

—Multilayer structure fabrication

1. Nb/Al-AlOx/Nb, Al/AlOx/Al, or even α-Ta/TaOx/α-Ta junctions

2. Compatible with Seed Layer Based Process

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Product Description

 1.  The system includes one load-lock chamber and multiple sputtering chambers.

 2.  Load-lock chamber is equipped with ion milling, RF plasma cleaning, gas passivation. 

 3.  Equipped with fully automatic operation interface.


Specification

Sample Size Max 12 inch Wafer and smaller chips compatible
Magnetron Cathode 4-6 inch Ultra High Vacuum Magnetron Cathode
Power Supply 1000W DC POWER
Ultimate Pressure ≤3E-9 Torr
Process Temperature 0-900°C
UniformitySheet Resistance Uniformity 1 Sigma NU%<±5% (8 inch wafer with 5 mm removal from the edge)


Application

 1.  Optics

 2.  Semiconductors

 3.  Metallic materials

 4.  Alloy materials

 5.  Superconducting materials

Related FAQs

How many UHV (ultra-high vacuum) chambers does this system have?

Multiple UHV Chamber: Loadlock and multiple Sputterings. Ultimate pressure<3E-9Torr

What is pumping speed of this system?

From ATM to 1E-7Torr<20min (loadlock)

What is the maximum heating temperature of this equipment?

RT-900℃

Multi-Chamber UHV Magnetron Sputter

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