English
English
Tags:
Optics
Magnetron Sputtering
Superconducting Materials
Semiconductor
Metallic Materials
Product Description
1. The system can be optionally configured with multiple chambers, including one load-lock chamber and multiple sputtering chambers.
2. Load-lock chamber is equipped with ion milling, RF plasma cleaning, gas passivation.
3. Ultimate pressure is better than 3E-9Torr.
4. Equipped with fully automatic operation interface.
Specification
| Sample Size | Max 12 inch Wafer and smaller chips compatible |
| Magnetron Cathode | 4-6 inch Ultra High Vacuum Magnetron Cathode |
| Power Supply | 1000W DC POWER |
| Ultimate Pressure | ≤3E-9 Torr |
| Process Temperature | 0-900°C |
| Uniformity | Sheet Resistance Uniformity 1 Sigma NU%<±5% (8 inch wafer with 5 mm removal from the edge) |
Application
1. Optics
2. Semiconductors
3. Metallic materials
4. Alloy materials
5. Superconducting materials
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