Tags:
Optics
Metallic Materials
Superconducting Materials
Semiconductor
Metallic Materials
Product Description
It supports Magnetron Sputtering for ITO Film and Seed Layer Based Process.
1. The system includes one load-lock chamber and multiple sputtering chambers.
2. Load-lock chamber is equipped with ion milling, RF plasma cleaning, gas passivation.
3. Equipped with fully automatic operation interface.
Ion Bombardment: Plasma ions accelerate toward a target, dislodging atoms by momentum transfer.
Magnetic Confinement: Magnetic fields trap electrons near the target, increasing plasma density and reducing ionization losses.
Reactive Sputtering: Introduction of reactive gases (e.g., O₂, N₂) allows for compound film deposition (oxides, nitrides).
Thermal Efficiency: The target remains relatively cool, which supports deposition of high-melting-point materials without excessive heating.
The system supports multiple UHV sputtering chambers plus a load-lock chamber for efficient sample loading.
Base pressure can reach ≤ 3 E-9 Torr, enabling ultra-clean film growth.
Process temperature range spans from room temperature up to 900 °C, enabling thermal processing or elevated-temperature depositions.
Modular chamber architecture supports multi-layer structures, such as Nb/Al-AlOx/Nb, Al/AlOx/Al, or even α-Ta/TaOx/α-Ta junctions.
Wafer Transfer: Highly reliable and repeatable substrate transferring capability
Uniformity: Sheet Resistance Uniformity 1 Sigma NU%<±5% (4 inch wafer with 5 mm removal from the edge)
Power Options: DC or RF power supply
Source Flexibility: It is compatible with different sputtering sources and reactive gas feed, allowing customization of material composition.
Fully automated control interface enables precise management of process parameters.
Real-time monitoring (e.g., thickness, rate) can be implemented via in-situ tools.
Substrate heating and biasing help tune film microstructure and uniformity.
Specification
| Sample Size | Max 12 inch Wafer and smaller chips compatible |
| Magnetron Cathode | 4-6 inch Ultra High Vacuum Magnetron Cathode |
| Power Supply | 1000W DC POWER |
| Ultimate Pressure | ≤3E-9 Torr |
| Process Temperature | 0-900°C |
| Uniformity | Sheet Resistance Uniformity 1 Sigma NU%<±5% (8 inch wafer with 5 mm removal from the edge) |
Application
1. Optics
2. Semiconductors
3. Metallic materials
4. Alloy materials
5. Superconducting materials
Related FAQs
RELATED PRODUCTS
—Material fabrication:
Niobium, Niobium Nitride, Tantalum, Aluminum, Alloy metal, ITO film
—Multilayer structure fabrication:
1. Nb/Al-AlOx/Nb, Al/AlOx/Al, or even α-Ta/TaOx/α-Ta junctions
2. Compatible with Seed Layer Based Process