English
English
Tags:
Mini/Micro LED
Microelectronics
VCSEL
Automotive Chip
ZLD Technology’s ZLD-TB-3 Thermal Batch ALD (Multi-Chamber)) system leverages advanced Thermal Atomic Layer Deposition technology to deliver high-precision thin film deposition for industrial applications.
It is a dedicated themal ALD designed for 4/6-inch LED manufacturing lines, comprising process chamber, motion control system and load/unload platform.
Product Description
ZLD-TB-3 Thermal Batch ALD (Multi-Chamber) delivers precise, conformal thin-film deposition with excellent uniformity, capable of handling complex, high-aspect-ratio structures. Its batch processing design enables efficient industrial-scale production, while multiple independently controlled precursor sources allow flexible material deposition for various applications.
1. Increases throughput while reducing COO
2. Scalable modular design maintains coating quality when expanding capacity/chambers
3. Unique gas flow design achieves:Within-wafer (WIW) non-uniformity <1.5%, Wafer-to-wafer (W2W) <2.5%, Batch-to-batch (B2B) <2.5%
4. Exclusive exhaust treatment system extends vacuum pump maintenance cycles, reducing costs
1. Oxides: Al₂O₃, HfO₂, SiO₂, TiO₂, Ta₂O₅
2. Nitrides: AlN, SiN
3. Metals and other materials: Pt, ZnO, AZO, and more
1. High thin-film uniformity and conformality on complex structures
2. Flexible precursor delivery for a wide variety of materials
3. Scalable batch processing suitable for industrial production
4. Capable of depositing oxides, nitrides, metals, and functional films
Specification
| XPS O/Al ratio | >1.40 |
| Breaking Voltage | >7.0 |
| Film density | 2.99 g/cm³ |
| Uniformity | ≤1.5% |
| Process chamber temperature limit | ≤ 250° |
Application
1. MiniLED
2. MicroLED
3. VCSEL
4. Microelectronics
Related FAQs
RELATED PRODUCTS
ZLD-DC-4 Diamond Microwave Plasma CVD
ZLD-DC-4 Diamond Microwave Plasma CVD systems are core equipment for advancing fourth-generation wide-bandgap semiconductors, committed to achieving extreme growth of high-quality single-crystal and polycrystalline diamond films. Purpose-built to overcome thermal management bottlenecks in high-power chips, this system delivers an ultimate heat-sink solution for next-generation high-frequency, high-power devices while enabling frontier exploration of diamond semiconductor materials.
Learn More
ZLD-TB-3 Thermal Batch ALD (Multi-Chamber)
ZLD Technology’s ZLD-TB-3 Thermal Batch ALD (Multi-Chamber)) system leverages advanced Thermal Atomic Layer Deposition technology to deliver high-precision thin film deposition for industrial applications.It is a dedicated themal ALD designed for 4/6-inch LED manufacturing lines, comprising process chamber, motion control system and load/unload platform.
Learn More
ZLD-ALD-12CL 8"/12" ALD Cluster System
ZLD-ALD-12CL balances both R&D and volume production requirements. It fully retains its mature and stable process performance, supports both thermal and plasma-enhanced (PE) modes, and consistently maintains its core advantage of low-oxygen thin-film deposition.
Learn More
ZLD-PB-350 Plasma Batch ALD realises low temperature, high quality plasma-enhanced ALD processes for high-quality thin film deposition (e.g., SiO₂, Al₂O₃, TiO₂) on various substrates, including lens, glass, organic materials, polymers, metals, and ceramics.
Learn More
ZLD-DP-6 Double-sided coated PEALD
ZLD-DP-6 adopts an exclusive design for double‑sided coating, enabling simultaneous and uniform deposition on both sides of the sample without the need for secondary flipping. This greatly improves production efficiency and film uniformity, making it suitable for high‑end applications with strict requirements on double‑sided film performance.It is also equipped with a fully automatic wafer handling system, realizing unmanned sample transfer throughout the process. This not only enhances operational efficiency but also fundamentally eliminates contamination risks caused by manual handling.
Learn More
ZLD-SiC-8 SiC Epitaxy CVD is purpose-built to satisfy the next-generation power electronics and rail transit demand for premium SiC epitaxial layers. Its innovative hot-wall induction heating and multi-gas mixing system ensures highly uniform epitaxy and exceptional doping control while remaining compatible with 6- and 8-inch wafers. Engineered for high output, this system significantly enhances throughput and reduces total cost of ownership, making it an ideal core platform for third-generation semiconductor manufacturing.
Learn More
ZLD-PW-1000 enables uniform and precisely controlled ALD or MLD on micro-nano powders, featuring patented powder containers, dynamic powder fluidization mechanisms, fully automated temperature control. The capacity is up to 100 g/1000 g.
Learn More
ZLD-CL-4DT 4 Chamber UHV Evaporator
ZLD-CL-4DT includes four process chambers: load-lock (pre-treatment) chamber, ion milling chamber, evaporator, oxidation chamber. Specially designed manipulator allows tilting and rotation of wafer with little friction. Fully automatic operation guarantee reproducible results. QBT-J is the advanced solution to tunneling junction, optical structure, metal-insulator-metal structure, capacitor and so on.
Learn More
Designed to meet the requirements for graphical and planar sapphire substrate micro-nano device oxidation layer packaging and coating
Ultra-high aspect ratio: Max 100:1