Tags:
plasma-enhanced ALD
Optics
AR/VR
Automotive Lens
Surveillance Lens
PEALD realises low temperature, high quality plasma-enhanced ALD processes for high-quality thin film deposition (e.g., SiO₂, Al₂O₃, TiO₂) on various substrates, including lens, glass, organic materials, polymers, metals, and ceramics.
Product Description
ZLD Technology’s Plasma Batch PEALD system leverages advanced Plasma Enhanced ALD technology to deliver high‑precision thin film deposition for industrial applications. Designed for large‑scale production, this system features a multi‑chamber batch process that significantly increases throughput while reducing production costs. Achieving ultra‑low reflectivity anti‑reflective (AR) coatings with reflectance as low as <0.05% across the visible spectrum, it ensures exceptional uniformity and repeatability. Ideal for applications in optics, third‑generation semiconductors, and integrated circuit manufacturing, the Plasma Batch PEALD system provides reliable and high‑quality thin films on substrates such as glass, polymers, metals, and ceramics.
How Does Plasma ALD Work?
Plasma Atomic Layer Deposition (Plasma ALD or PEALD) operates through a sequence of self-limiting surface reactions, similar to conventional thermal ALD, but replaces one reactant step with plasma-activated species to enhance reactivity.
Plasma ALD cycle includes four steps:
1. Precursor Exposure: A chemical precursor is introduced into the reaction chamber and adsorbs onto the substrate surface through chemisorption. Once all available reactive sites are occupied, no further reaction occurs, ensuring atomic-level control.
2. Purge Step: An inert gas removes excess precursor molecules and gaseous byproducts from the chamber, preventing gas-phase reactions.
3. Plasma Reaction Step: A plasma is generated using gases such as oxygen, nitrogen, hydrogen, or ammonia. The plasma creates highly reactive radicals and excited species that react with the adsorbed precursor layer, completing the surface reaction and forming the desired solid film.
4. Second Purge: Residual plasma species and reaction byproducts are purged before the next deposition cycle begins.
By repeating this cycle, Plasma ALD enables precise thickness control at the atomic scale while allowing deposition at lower temperatures and improving film density, purity, and uniformity compared to thermal ALD.
Advantages
1. Batch-process multi-chamber design significantly increases throughput while dramatically reducing ALD production costs
2. Industry-leading coating uniformity, repeatability, and reliability
3. Enables conformal deposition on entire lens surfaces and 3D micro/nano structures
Specification
| 12-inch wafer Ru film thickness non-uniformity | <1% |
| Batch-to-batch Ru film thickness non-uniformity | <1% |
| Reflectance (R) at visible spectrum | < 0.05% |
| Film thickness accuracy of the AR coating | 0.1 nm |
Application
1. Advanced Optical Films (AR)
2. Third Generation Semiconductors
3. Integrated circuit manufacturing
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