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Tags:
Optics
Metallic Materials
Superconducting Materials
Semiconductor
Metallic Materials
Product Description
ZLD-SP-4MG Multi-Chamber UHV Magnetron Sputter system from ZLD Technology is engineered for high-precision thin film deposition in ultra-clean environments. With capabilities including processing temperatures up to 900°C and ultimate pressures as low as ≤3E-9 Torr, this system is ideal for applications in optics, semiconductors, and superconducting materials. Its advanced features ensure uniform film quality and reproducibility, making it a reliable choice for cutting-edge research and development. The system can be optionally configured with multiple chambers, including one load-lock chamber and multiple sputtering chambers. It is the cutting edge vacuum system for novel materials. It supports Magnetron Sputtering for ITO Film and Seed Layer Based Process.
1. The system includes one load-lock chamber and multiple sputtering chambers.
2. Load-lock chamber is equipped with ion milling, RF plasma cleaning, gas passivation.
3. Equipped with fully automatic operation interface.
Ion Bombardment: Plasma ions accelerate toward a target, dislodging atoms by momentum transfer.
Magnetic Confinement: Magnetic fields trap electrons near the target, increasing plasma density and reducing ionization losses.
Reactive Sputtering: Introduction of reactive gases (e.g., O₂, N₂) allows for compound film deposition (oxides, nitrides).
Thermal Efficiency: The target remains relatively cool, which supports deposition of high-melting-point materials without excessive heating.
The system supports multiple UHV sputtering chambers plus a load-lock chamber for efficient sample loading.
Base pressure can reach ≤ 3E-9 Torr, enabling ultra-clean film growth.
Process temperature range spans from room temperature up to 900 °C, enabling thermal processing or elevated-temperature depositions.
Modular chamber architecture supports multi-layer structures, such as Nb/Al-AlOx/Nb, Al/AlOx/Al, or even α-Ta/TaOx/α-Ta junctions.
Wafer Transfer: Highly reliable and repeatable substrate transferring capability
Fully automated control interface enables precise management of process parameters.
Real-time monitoring (e.g., thickness, rate) can be implemented via in-situ tools.
Specification
| Sample Size | Max 6 inch Wafer and smaller chips compatible |
| Magnetron Cathode | 4-6 inch Ultra High Vacuum Magnetron Cathode |
| Power Supply | DC or RF power supply，wafer and target space can change continoulsly |
| Ultimate Pressure | ≤3E-9 Torr |
| Process Temperature | 0-900°C |
| Uniformity | Sheet Resistance Uniformity 1 Sigma NU%<±5% (4 inch wafer with 5 mm removal from the edge) |
| Source Flexibility | Different sputtering sources and reactive gas feed, allowing customization of material composition |
Application
1. Optics
2. Semiconductors
3. Metallic materials
4. Alloy materials
5. Superconducting materials
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—Material fabrication：
Niobium, Niobium Nitride, Tantalum, Aluminum, Alloy metal, ITO film
—Multilayer structure fabrication：
1. Nb/Al-AlOx/Nb, Al/AlOx/Al, or even α-Ta/TaOx/α-Ta junctions
2. Compatible with Seed Layer Based Process