YM ZLD Unveils Next-Gen ALD System for Third-Generation Semiconductors

M ZLD proudly announces the launch of its next-generation Atomic Layer Deposition (ALD) system specifically designed for third-generation semiconductors, including GaN and SiC. This system offers atomic-level film thickness control and coating uniformity, making it ideal for MiniLED, MicroLED, VCSEL, and automotive-grade chip production.

The system supports plasma-enhanced ALD (PEALD) processes under ultra-high vacuum (UHV) conditions, ensuring superior interface quality and minimal defect density. This innovation addresses critical challenges in power electronics and quantum devices by enabling low-temperature deposition on temperature-sensitive substrates.