YM ZLD Unveils Next-Gen ALD System for Third-Generation Semiconductors

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M ZLD proudly announces the launch of its next-generation Atomic Layer Deposition (ALD) system specifically designed for third-generation semiconductors, including GaN and SiC. This system offers atomic-level film thickness control and coating uniformity, making it ideal for MiniLED, MicroLED, VCSEL, and automotive-grade chip production.

The system supports plasma-enhanced ALD (PEALD) processes under ultra-high vacuum (UHV) conditions, ensuring superior interface quality and minimal defect density. This innovation addresses critical challenges in power electronics and quantum devices by enabling low-temperature deposition on temperature-sensitive substrates.

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ALD & UHV SYSTEM

ZLD-DT-6 Desktop ALD

ZLD-DT-6 Desktop ALD

ZLD-PB-300E Plasma Batch ALD (EFEM)

ZLD-PB-300E Plasma Batch ALD (EFEM)

ZLD-PB-350 Plasma Batch ALD

ZLD-PB-350 Plasma Batch ALD

ZLD-DP-6 Double-sided coated PEALD

ZLD-DP-6 Double-sided coated PEALD

ZLD-PW-1000 Powder ALD

ZLD-PW-1000 Powder ALD

ZLD-SP-4MG Multi-Chamber UHV Magnetron Sputter

ZLD-SP-4MG Multi-Chamber UHV Magnetron Sputter

ZLD-CL-4DT 4 Chamber UHV Evaporator

ZLD-CL-4DT 4 Chamber UHV Evaporator

ZLD-ALD-12CL 8"/12" ALD Cluster System

ZLD-ALD-12CL 8"/12" ALD Cluster System
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