SiC Epitaxy CVD — Third-generation semiconductor equipment

ZLD-PB-300E Plasma Batch ALD (EFEM) enables low-temperature, high-quality PEALD processing, allowing premium optical films—such as SiO2, Al2O3, and TiO2—to be deposited onto temperature-sensitive substrates. It can also grow a variety of ALD films on bases made of glass, silicon wafers, ceramics, organic materials, polymers, metals, and other materials.

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ZLD-SiC-8 SiC Epitaxy CVD

ZLD-SiC-8 SiC Epitaxy CVD is purpose-built to satisfy the next-generation power electronics and rail transit demand for premium SiC epitaxial layers. Its innovative hot-wall induction heating and multi-gas mixing system ensures highly uniform epitaxy and exceptional doping control while remaining compatible with 6- and 8-inch wafers. Engineered for high output, this system significantly enhances throughput and reduces total cost of ownership, making it an ideal core platform for third-generation semiconductor manufacturing.

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ZLD-ALD-12CL 8"/12" ALD Cluster System

ZLD-ALD-12CL balances both R&D and volume production requirements. It fully retains its mature and stable process performance, supports both thermal and plasma-enhanced (PE) modes, and consistently maintains its core advantage of low-oxygen thin-film deposition.

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ZLD-SP-4MG Multi-Chamber UHV Magnetron Sputter

ZLD-SP-4MG can be optionally configured with multiple chambers, including one load-lock chamber and multiple sputtering chambers. It is the cutting edge vacuum system for novel materials. It supports Magnetron Sputtering for ITO Film and Seed Layer Based Process.

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ZLD-DC-4 Diamond Microwave Plasma CVD

ZLD-DC-4 Diamond Microwave Plasma CVD systems are core equipment for advancing fourth-generation wide-bandgap semiconductors, committed to achieving extreme growth of high-quality single-crystal and polycrystalline diamond films. Purpose-built to overcome thermal management bottlenecks in high-power chips, this system delivers an ultimate heat-sink solution for next-generation high-frequency, high-power devices while enabling frontier exploration of diamond semiconductor materials.

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ZLD-CL-4DT 4 Chamber UHV Evaporator

ZLD-CL-4DT includes four process chambers: load-lock (pre-treatment) chamber, ion milling chamber, evaporator, oxidation chamber. Specially designed manipulator allows tilting and rotation of wafer with little friction. Fully automatic operation guarantee reproducible results. QBT-J is the advanced solution to tunneling junction, optical structure, metal-insulator-metal structure, capacitor and so on.

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ZLD-PW-1000 Powder ALD

ZLD-PW-1000 enables uniform and precisely controlled ALD or MLD on micro-nano powders, featuring patented powder containers, dynamic powder fluidization mechanisms, fully automated temperature control. The capacity is up to 100 g/1000 g.

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ZLD-DP-6 Double-sided coated PEALD

ZLD-DP-6 adopts an exclusive design for double‑sided coating, enabling simultaneous and uniform deposition on both sides of the sample without the need for secondary flipping. This greatly improves production efficiency and film uniformity, making it suitable for high‑end applications with strict requirements on double‑sided film performance.It is also equipped with a fully automatic wafer handling system, realizing unmanned sample transfer throughout the process. This not only enhances operational efficiency but also fundamentally eliminates contamination risks caused by manual handling.

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