In modern semiconductor fabrication, advanced manufacturing equipment and production systems are essential for scaling device performance, efficiency, and reliability. Among these critical tools, Atomic Layer Deposition (ALD) systems have become indispensable due to their ability to deposit ultra-thin, highly uniform, and conformal films at the atomic scale. ALD technology enables exceptional control over film thickness and composition by employing sequential, self-limiting surface reactions, allowing precise thin film growth that is crucial for nanoscale device layers and complex three-dimensional structures encountered in advanced semiconductor nodes. Atomic Layer Deposition (ALD) is a precision thin-film deposition technology widely used in advanced device fabrication. From semiconductor devices to supercapacitors, microdevices, MEMS, nanoscale devices, and integrated circuits, ALD provides uniform, conformal coatings that enhance performance, reliability, and manufacturing precision.

ALD in Semiconductor Production Equipment

ALD equipment forms a key component of semiconductor production lines, working alongside other deposition tools to support diverse wafer fabrication steps. In high-performance logic and memory manufacturing, ALD is deployed to grow:

High‑κ dielectrics for gate insulators, improving transistor performance and leakage characteristics

Metal nitrides and barrier layers for interconnects, ensuring diffusion control and interconnect reliability

Moisture barrier and encapsulation films for device protection during back‑end processing

The conformal nature of ALD enables uniform film coverage over high‑aspect‑ratio structures such as through‑silicon vias (TSVs) and 3D NAND flash trenches, which are difficult to coat evenly using conventional deposition techniques.

Advantages of ALD for Semiconductor Manufacturing Equipment

Semiconductor manufacturing equipment that incorporates ALD technology enhances production yield and device reliability. Because ALD deposits films with atomic‑level thickness control and excellent uniformity, it supports the strict tolerances demanded by advanced logic transistors, memory architectures, MEMS devices, and other microelectronic components. ALD’s ability to coat intricate topographies helps maintain uniform electrical characteristics across wafers, ensuring that production equipment delivers consistent results at scale. Additionally, robust process control and ultra‑clean reaction environments in ALD systems minimize contamination risks, a critical factor for high‑volume semiconductor fabrication.

What We Provide

ZLD independently developed CVD systems—including SiC epitaxial CVD, diamond MPCVD, and PECVD—serve the third-generation, fourth-generation , and silicon-based integrated circuit semiconductor markets. Leveraging 20+ proprietary core patents, Yunmao has established technological barriers in key process module innovation, reaction chamber flow field design and in-situ monitoring systems. 

These advancements deliver exceptional performance and stability for high-frequency devices, power electronics, MEMS sensors and Memory chips. As the global semiconductor industry shifts toward wide-bandgap materials, Yunmao strengthens strategic collaborations with industry leaders, accelerating the industrialization of next-gen semiconductor materials and devices through customized equipment solutions.