Atomic Layer Deposition (ALD) is a precision thin-film deposition technology widely used in advanced device fabrication. From semiconductor devices to supercapacitors, microdevices, MEMS, nanoscale devices, and integrated circuits, ALD provides uniform, conformal coatings that enhance performance, reliability, and manufacturing precision.

ZLD independently developed CVD systems—including SiC epitaxial CVD, diamond MPCVD, and PECVD—serve the third-generation, fourth-generation , and silicon-based integrated circuit semiconductor markets. Leveraging 20+ proprietary core patents, Yunmao has established technological barriers in key process module innovation, reaction chamber flow field design and in-situ monitoring systems. 

These advancements deliver exceptional performance and stability for high-frequency devices, power electronics, MEMS sensors and Memory chips. As the global semiconductor industry shifts toward wide-bandgap materials, Yunmao strengthens strategic collaborations with industry leaders, accelerating the industrialization of next-gen semiconductor materials and devices through customized equipment solutions.

ALD in Supercapacitors

Supercapacitors rely on high surface area materials and precise thin-film coatings to maximize energy storage. ALD enables the deposition of uniform layers on complex 3D structures, improving capacitance, cycle stability, and electrode longevity. Engineers in energy storage research frequently turn to ALD to optimize supercapacitor performance and material functionality.

ALD in Microdevices

Microdevices, including sensors, actuators, and micro-electromechanical components, demand nanometer-scale control over thin films. ALD ensures high conformality, enabling consistent dielectric layers, protective coatings, and functional surfaces. Researchers and developers leverage ALD to achieve precise control over device dimensions and enhance operational reliability.

ALD in MEMS Devices

MEMS devices require robust, thin-film coatings for mechanical stability and electrical performance. ALD provides the atomic-scale precision needed for MEMS fabrication, supporting applications such as micro-mirrors, accelerometers, and pressure sensors. With ALD, MEMS engineers can improve performance, reduce defects, and expand device functionality.

ALD for Nanoscale Devices

As devices shrink to the nanoscale, deposition precision becomes critical. ALD enables layer-by-layer growth with atomic accuracy, making it ideal for nanoscale transistors, sensors, and photonic devices. Researchers benefit from ALD’s ability to control film thickness, composition, and interface quality at the nanometer level.

ALD for Semiconductor Devices

In semiconductor manufacturing, ALD plays a key role in depositing high-k dielectrics, metal oxides, and barrier layers. It ensures uniform coatings on complex 3D transistor structures, enhancing device performance, reducing leakage currents, and enabling next-generation logic and memory devices. Semiconductor engineers rely on ALD for scalable, reproducible processes.

ALD for Integrated Circuits

Integrated circuits (ICs) require precise, conformal films to achieve high device density and performance. ALD is used in IC fabrication to deposit gate dielectrics, passivation layers, and metal oxide films, ensuring uniformity and reliability across wafers. By integrating ALD into IC production, manufacturers can meet the stringent demands of modern electronics.

Conclusion

ALD is a versatile, high-precision technology that supports a wide range of applications, from energy storage to microdevices, MEMS, nanoscale devices, semiconductor devices, and integrated circuits. Its unique ability to deposit uniform, atomic-scale films makes it indispensable for advanced manufacturing and next-generation device development.