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Industrial SiC Epitaxy CVD
SiC Epitaxy Equipment / SiC Epitaxy Systems
Induction-Heated Epitaxy
Third-Generation Semiconductors
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ZLD-SiC-8 SiC Epitaxy CVD is purpose-built to satisfy the next-generation power electronics and rail transit demand for premium SiC epitaxial layers. Its innovative hot-wall induction heating and multi-gas mixing system ensures highly uniform epitaxy and exceptional doping control while remaining compatible with 6- and 8-inch wafers. Engineered for high output, this system significantly enhances throughput and reduces total cost of ownership, making it an ideal core platform for third-generation semiconductor manufacturing.
Product Description
ZLD-SiC-8 SiC Epitaxy CVD is purpose-built to satisfy the next-generation power electronics and rail transit demand for premium SiC epitaxial layers. Its innovative hot-wall induction heating and multi-gas mixing system ensures highly uniform epitaxy and exceptional doping control while remaining compatible with 6- and 8-inch wafers. Engineered for high output, this system significantly enhances throughput and reduces total cost of ownership, making it an ideal core platform for third-generation semiconductor manufacturing.
Specification
Hot-wall induction heating architecture ensures a uniform thermal profile
Superior product specifications translate into improved device performance
Multiple gas-mixing mechanisms accommodate diverse process requirements
High throughput and low production cost maximize return on investment
Application
Power electronics sector: new energy vehicles (NEVs), DC charging stations, solar PV power generation, wind power generation, and more.
Rail transit sector: traction converter systems, among others.
Other sectors: large-scale servers, data centers, defense, aerospace, industrial control, and more.
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Hot-wall induction heating architecture ensures a uniform thermal profile
Superior product specifications translate into improved device performance
Multiple gas-mixing mechanisms accommodate diverse process requirements
High throughput and low production cost maximize return on investment