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ZLD-ALD-12CL balances both R&D and volume production requirements. It fully retains its mature and stable process performance, supports both thermal and plasma-enhanced (PE) modes, and consistently maintains its core advantage of low-oxygen thin-film deposition.
Product Description
Two key configurations have been upgraded: first, an ultra-high vacuum (UHV) transfer platform has been introduced to optimize the vacuum environment during sample transfer, isolate contamination, reduce impurity levels, and strengthen oxygen-impurity suppression, providing reliable assurance for high-end thin-film fabrication; second, an EFEM (Equipment Front-End Module) system equipped with dual FOUPs has been adopted to substantially improve transfer efficiency and automation, enabling efficient handling of multiple sample batches and meeting pilot-line and volume production needs.
Specification
Leak Rate: < 1×10⁻⁹ atm·cc/s (He)
Loadlock Base Pressure: ≤ 5×10⁻⁶ Torr
Transfer Chamber Base Pressure: ≤ 9×10⁻⁸ Torr
Process Chamber Base Pressure: ≤ 5×10⁻⁸ Torr
Sample Heating Temperature: > 450°C
Film Thickness Non-uniformity: 1σ < 3% (12-inch wafer, 5 mm edge exclusion)
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